Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP020N06N IPP020N06N

Manufacturer: Infineon Technologies
Win Source Part Number: 205234-IPP020N06N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 29A (Ta), 120A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 143μA
Max Gate Charge: 106nC @ 10V
Max Input Capacitance: 7800pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

MOSFET N-Channel 60V 120A OptiMOS TO220

MOSFET N-Channel 60V 120A OptiMOS TO220

MOSFET N-Channel 60V 120A OptiMOS TO220

MOSFETs N-Ch 60V 120A TO220-3 Product overview: IPP020N06N from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 120A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 120A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP020N06N can be used for catalog matching and distributor lookup.