The Infineon IPP019N08NF2S is an N-channel MOSFET designed for a variety of applications, featuring a maximum drain-source voltage (VDS) of 80V and a continuous drain current (ID) rating of 191A at a gate-source voltage (VGS) of 10V and a case temperature of 25¬8C. This device is 100% avalanche tested, ensuring reliability under high-stress conditions. It has a maximum on-resistance (RDS(on)) of 1.9 mOc, which contributes to its efficiency in power applications. The MOSFET is housed in a TO-220 package, facilitating effective thermal management with a thermal resistance from junction to case (RthJC) of 0.6¬8C/W. It is RoHS compliant and halogen-free, making it suitable for environmentally conscious designs. The device operates within a temperature range of -55¬8C to 175¬8C, accommodating various environmental conditions.
TRENCH 40<-<100V>
N-Channel 80V 32A (Ta), 191A (Tc) 3.8W (Ta), 250W (Tc) Through Hole PG-TO220-3
Win Source Part Number: 1065203-IPP019N08NF2
Category: Discrete Semiconductor Products>Transistors
Series: StrongIRFET™ 2
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPP019N08NF2SAKM
Base Product Number: IPP019N
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
TRENCH 40<-<100V
MOSFET, N-CH, 80V, 191A, TO-220 ROHS COMPLIANT: YES
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2286540 | 278-IPP019N08NF2SAKMA1 | 448-IPP019N08NF2SAKMA1-ND | 1065203-IPP019N08NF2SAKMA1 | IPP019N08NF2SAKMA1 | 36AJ3707 |
| Product Name | MOSFETs | 100V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 191A, To-220 Rohs Compliant Infineon |
| Package Type | TO-220; TO-220 | Tube | TO-220; TO-220-3 | SOT3 | TO-220; TO-220-3 | TO-3; TO-220 |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 80 volts |
