Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPN70R1K5CE

Description
Win Source Part Number: 1278321-IPN70R1K5CE Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 100µA Power Dissipation (Max): 5W (Tc) Package / Case: TO-261-3 Supplier Device Package: PG-SOT223 Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Fake Threat In the Open Market: 62 pct. HTSUS: 0000.00.0000 Mfr: Infineon Technologies Other Names: 2156-IPN70R1K5CE,ROC INFIPN70R1K5CE Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278321-IPN70R1K5CE - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPN70R1K5CE - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Win Source Part Number: 1278321-IPN70R1K5CE Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 100µA Power Dissipation (Max): 5W (Tc) Package / Case: TO-261-3 Supplier Device Package: PG-SOT223 Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Fake Threat In the Open Market: 62 pct. HTSUS: 0000.00.0000 Mfr: Infineon Technologies Other Names: 2156-IPN70R1K5CE,ROC INFIPN70R1K5CE Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278321-IPN70R1K5CE - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278321-IPN70R1K5CE
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278321-IPN70R1K5CE
Win Source Part Number: 1278321-IPN70R1K5CE Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 100µA Power Dissipation (Max): 5W (Tc) Package / Case: TO-261-3 Supplier Device Package: PG-SOT223 Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Fake Threat In the Open Market: 62 pct. HTSUS: 0000.00.0000 Mfr: Infineon Technologies Other Names: 2156-IPN70R1K5CE,ROC INFIPN70R1K5CE Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278321-IPN70R1K5CE
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 5W (Tc)
Package / Case: TO-261-3
Supplier Device Package: PG-SOT223
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Fake Threat In the Open Market: 62 pct.
HTSUS: 0000.00.0000
Mfr: Infineon Technologies
Other Names: 2156-IPN70R1K5CE,ROCINFIPN70R1K5CE
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IPN70R1K5CE - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPN70R1K5CE
Single FETs, MOSFETs IPN70R1K5CE
SMALL SIGNAL FIELD-EFFECT TRANSI

SMALL SIGNAL FIELD-EFFECT TRANSI

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1278321-IPN70R1K5CE IPN70R1K5CE
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT3 TO-261-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 700 volts
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