Manufacturer: Infineon Technologies
Win Source Part Number: 1324097-IPN60R2K1CEA
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 5W (Tc)
Supplier Device Package: PG-SOT223-3
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: TO-261-4, TO-261AA
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: INFINFIPN60R2K1CEATM
Base Product Number: IPN60R2
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
N-Channel 600V 3.7A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
N-Channel 600V 3.7A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
N-Channel 600V 3.7A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
MOSFET N-CH 600V 3.7A SOT223 Product overview: IPN60R2K1CEATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPN60R2K1CEATMA1
MOSFET N-CH 600V 3.7A SOT223
MOSFET N-CH 600V 3.7A SOT223
MOSFET, N-CH, 600V, 3.7A, SOT-223-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1324097-IPN60R2K1CEATMA1 | IPN60R2K1CEATMA1DKR-ND | 278-IPN60R2K1CEATMA1 | IPN60R2K1CEATMA1 | IPN60R2K1CEATMA1 | IPN60R2K1CEATMA1 | 97Y1834 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 600V 3.7A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 3.7A, Sot-223-3; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 5000 milliwatts | 5 milliwatts | 5000 milliwatts | ||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ||||
| Package Type | SOT3; TO-261-4, TO-261AA | TO-261-4, TO-261AA | Tape & Reel (TR) | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-3; SOT223 | |
| Packing Method | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
