Infineon Technologies AG Single FETs, MOSFETs IPI90R500C3XKSA2

Description
N-Channel 900V 11A (Tc) 156W (Tc) Through Hole PG-TO262-3-1
Request a Quote Datasheet
Description
N-Channel 900V 11A (Tc) 156W (Tc) Through Hole PG-TO262-3-1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 448-IPI90R500C3XKSA2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPI90R500C3XKSA2-ND
Single FETs, MOSFETs 448-IPI90R500C3XKSA2-ND
N-Channel 900V 11A (Tc) 156W (Tc) Through Hole PG-TO262-3-1

N-Channel 900V 11A (Tc) 156W (Tc) Through Hole PG-TO262-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 994454-IPI90R500C3XKSA2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
994454-IPI90R500C3XKSA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 994454-IPI90R500C3XKSA2
Win Source Part Number: 994454-IPI90R500C3XK SA2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 740µA Power Dissipation (Max): 156W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3-1 Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP002548886 Base Product Number: IPI90R500 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 994454-IPI90R500C3XKSA2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Power Dissipation (Max): 156W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP002548886
Base Product Number: IPI90R500
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPI90R500C3XKSA2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPI90R500C3XKSA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPI90R500C3XKSA2
MOSFET N-CH 900V 11A TO262-3

MOSFET N-CH 900V 11A TO262-3

Supplier's Site
MOSFET

MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 448-IPI90R500C3XKSA2-ND 994454-IPI90R500C3XKSA2 IPI90R500C3XKSA2 IPI90R500C3XKSA2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1052MCTR-E - 855018-2SA1052MCTR-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 25 GHz, 14 Watt, 28 V GaN RF Transistor - TGF2934 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type die
Power Gain 14 dB
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFN8459TR - 862665-AUIRFN8459TR - Win Source Electronics
Specs
Polarity N-Channel
TJ -55 to 175 C (-67 to 347 F)
Package Type SOT3; PQFN (5x6)
View Details
7 suppliers
GaAs Fet Switches - KCB822 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 6000 MHz
View Details