Infineon Technologies AG Single FETs, MOSFETs IPI80N06S207AKSA2

N-Channel 55V 80A (Tc) 250W (Tc) Through Hole PG-TO262-3-1

Manufacturer: Infineon Technologies
Win Source Part Number: 814010-IPI80N06S207AKSA2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55V
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 250W (Tc)
Popularity: Low
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6.6mOhm at 68A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3400pF at 25V
Current - Continuous Drain (Id) at 25°C: 80A (Tc)
Vgs(th) (Maximum) at Id: 4V at 180μA
Maximum Vgs: ±20V

MOSFET N-CH 55V 80A TO262-3 Product overview: IPI80N06S207AKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI80N06S207AKSA2 can be used for catalog matching and distributor lookup.