N-Channel 55V 80A (Tc) 250W (Tc) Through Hole PG-TO262-3-1
Manufacturer: Infineon Technologies
Win Source Part Number: 814010-IPI80N06S207A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55V
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 250W (Tc)
Popularity: Low
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6.6mOhm at 68A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3400pF at 25V
Current - Continuous Drain (Id) at 25°C: 80A (Tc)
Vgs(th) (Maximum) at Id: 4V at 180μA
Maximum Vgs: ±20V
MOSFET N-CH 55V 80A TO262-3
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPI80N06S207AKSA2-ND | 814010-IPI80N06S207AKSA2 | IPI80N06S207AKSA2 | IPI80N06S207AKSA2 |
| Product Name | Single FETs, MOSFETs | FETs - Single - IPI80N06S207AKSA2 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3 | 3400 pF @ 25 V | |
| Transistor Grade / Operating Range | Automotive |
