Infineon Technologies AG 55V 80A MOSFET Transistor IPI80N06S207AKSA2

Description
MOSFET N-CH 55V 80A TO262-3 Product overview: IPI80N06S207AKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI80N06S207AKSA 2 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 55V 80A TO262-3 Product overview: IPI80N06S207AKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI80N06S207AKSA 2 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
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Singapore
55V 80A MOSFET Transistor
278-IPI80N06S207AKSA2
55V 80A MOSFET Transistor 278-IPI80N06S207AKSA2
MOSFET N-CH 55V 80A TO262-3 Product overview: IPI80N06S207AKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI80N06S207AKSA 2 can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 80A TO262-3 Product overview: IPI80N06S207AKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI80N06S207AKSA2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Single - IPI80N06S207AKSA2 - 814010-IPI80N06S207AKSA2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IPI80N06S207AKSA2
814010-IPI80N06S207AKSA2
FETs - Single - IPI80N06S207AKSA2 814010-IPI80N06S207AKSA2
Manufacturer: Infineon Technologies Win Source Part Number: 814010-IPI80N06S207A KSA2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 55V Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 250W (Tc) Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 6.6mOhm at 68A, 10V Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 3400pF at 25V Current - Continuous Drain (Id) at 25°C: 80A (Tc) Vgs(th) (Maximum) at Id: 4V at 180μA Maximum Vgs: ±20V

Manufacturer: Infineon Technologies
Win Source Part Number: 814010-IPI80N06S207AKSA2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55V
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 250W (Tc)
Popularity: Low
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6.6mOhm at 68A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3400pF at 25V
Current - Continuous Drain (Id) at 25°C: 80A (Tc)
Vgs(th) (Maximum) at Id: 4V at 180μA
Maximum Vgs: ±20V

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Single FETs, MOSFETs - IPI80N06S207AKSA2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPI80N06S207AKSA2-ND
Single FETs, MOSFETs IPI80N06S207AKSA2-ND
N-Channel 55V 80A (Tc) 250W (Tc) Through Hole PG-TO262-3-1

N-Channel 55V 80A (Tc) 250W (Tc) Through Hole PG-TO262-3-1

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MOSFET N-CHANNEL_55/60V

MOSFET N-CHANNEL_55/60V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPI80N06S207AKSA2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPI80N06S207AKSA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPI80N06S207AKSA2
MOSFET N-CH 55V 80A TO262-3

MOSFET N-CH 55V 80A TO262-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-IPI80N06S207AKSA2 814010-IPI80N06S207AKSA2 IPI80N06S207AKSA2-ND IPI80N06S207AKSA2 IPI80N06S207AKSA2
Product Name 55V 80A MOSFET Transistor FETs - Single - IPI80N06S207AKSA2 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 55 volts
PD 250000 milliwatts 250000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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4 suppliers