MOSFET N-CH 55V 80A TO262-3 Product overview: IPI80N06S207AKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI80N06S207AKSA
Manufacturer: Infineon Technologies
Win Source Part Number: 814010-IPI80N06S207A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55V
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 250W (Tc)
Popularity: Low
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6.6mOhm at 68A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3400pF at 25V
Current - Continuous Drain (Id) at 25°C: 80A (Tc)
Vgs(th) (Maximum) at Id: 4V at 180μA
Maximum Vgs: ±20V
N-Channel 55V 80A (Tc) 250W (Tc) Through Hole PG-TO262-3-1
MOSFET N-CH 55V 80A TO262-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPI80N06S207AKSA2 | 814010-IPI80N06S207AKSA2 | IPI80N06S207AKSA2-ND | IPI80N06S207AKSA2 | IPI80N06S207AKSA2 |
| Product Name | 55V 80A MOSFET Transistor | FETs - Single - IPI80N06S207AKSA2 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 55 volts | ||||
| PD | 250000 milliwatts | 250000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
