Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI80N04S303AKSA1 IPI80N04S303AKSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 776885-IPI80N04S303A KSA1 Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Family Name: IPI80N04S303AKSA1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-TO262-3 Channel Type Type: N Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 4V @ 120μA Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 7300pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 188W (Tc) Rds On (Maximum) @ Id, Vgs: 3.5 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): BUK6E2R340C; BUK7E1R8-40E; BUK7E2R3-40E; BUK7E2R3-40C; Introduction Date: February 20, 2007 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 776885-IPI80N04S303A KSA1 Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Family Name: IPI80N04S303AKSA1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-TO262-3 Channel Type Type: N Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 4V @ 120μA Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 7300pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 188W (Tc) Rds On (Maximum) @ Id, Vgs: 3.5 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): BUK6E2R340C; BUK7E1R8-40E; BUK7E2R3-40E; BUK7E2R3-40C; Introduction Date: February 20, 2007 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI80N04S303AKSA1 - 776885-IPI80N04S303AKSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI80N04S303AKSA1
776885-IPI80N04S303AKSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI80N04S303AKSA1 776885-IPI80N04S303AKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 776885-IPI80N04S303A KSA1 Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Family Name: IPI80N04S303AKSA1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-TO262-3 Channel Type Type: N Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 4V @ 120μA Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 7300pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 188W (Tc) Rds On (Maximum) @ Id, Vgs: 3.5 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): BUK6E2R340C; BUK7E1R8-40E; BUK7E2R3-40E; BUK7E2R3-40C; Introduction Date: February 20, 2007 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 776885-IPI80N04S303AKSA1
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Family Name: IPI80N04S303AKSA1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO262-3
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 4V @ 120μA
Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 7300pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 188W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
Alternative Parts (Cross-Reference): BUK6E2R340C; BUK7E1R8-40E; BUK7E2R3-40E; BUK7E2R3-40C;
Introduction Date: February 20, 2007
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IPI80N04S303AKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPI80N04S303AKSA1-ND
Single FETs, MOSFETs IPI80N04S303AKSA1-ND
N-Channel 40V 80A (Tc) 188W (Tc) Through Hole PG-TO262-3

N-Channel 40V 80A (Tc) 188W (Tc) Through Hole PG-TO262-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPI80N04S303AKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPI80N04S303AKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPI80N04S303AKSA1
MOSFET N-CH 40V 80A TO262-3

MOSFET N-CH 40V 80A TO262-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 776885-IPI80N04S303AKSA1 IPI80N04S303AKSA1-ND IPI80N04S303AKSA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI80N04S303AKSA1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 188000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type SOT3 TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA
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