The IPI70R950CE is a 700V CoolMOS™ CE N-channel MOSFET designed for cost-sensitive consumer and lighting applications. It is packaged in a PG-TO262-3-1 (I²PAK) case with a maximum continuous drain current of 7.4 A at TC=25°C and a pulsed drain current of 12 A. The device has a maximum RDS(on) of 950 mΩ, a typical gate charge of 15.3 nC, and an off-state energy dissipation of 1.5 µJ at 400 V. It is qualified for standard grade applications and supports an operating junction temperature range from -40°C to 150°C. The package is a through-hole mount with three pins and a drain tab.
Win Source Part Number: 1345672-IPI70R950CE
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: CoolMOS™
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 700 V
Power Dissipation (Max): 68W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Fake Threat In the Open Market: 55 pct.
HTSUS: 0000.00.0000
Mfr: Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 150mA
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
| Win Source Electronics | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 1345672-IPI70R950CE |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| Polarity | N-Channel |
