Infineon Technologies AG MOSFET IPI70N10SL-16

Description
MOSFET N-Ch 100V 70A I2PAK-3 SIPMOS
Description
MOSFET N-Ch 100V 70A I2PAK-3 SIPMOS
Datasheet
Datasheet Summary
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IPI70N10SL-16 is an N-channel MOSFET in a PG-TO262-3-1 package, rated for a continuous drain current of 70 A at 25°C and a drain-source voltage of 100 V. It has a maximum on-state resistance of 16 mΩ at 10 V gate-source voltage and can operate at junction temperatures up to 175°C. The device is avalanche-rated with a single-pulse avalanche energy of 700 mJ and supports a reverse diode dv/dt of 6 kV/µs. It meets the IEC climatic category 55/175/56 and is designated as a green package (lead-free).

Datasheet Summary
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IPI70N10SL-16 is an N-channel MOSFET in a PG-TO262-3-1 package, rated for a continuous drain current of 70 A at 25°C and a drain-source voltage of 100 V. It has a maximum on-state resistance of 16 mΩ at 10 V gate-source voltage and can operate at junction temperatures up to 175°C. The device is avalanche-rated with a single-pulse avalanche energy of 700 mJ and supports a reverse diode dv/dt of 6 kV/µs. It meets the IEC climatic category 55/175/56 and is designated as a green package (lead-free).

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Sheung Wan, Hong Kong
MOSFET N-Ch 100V 70A I2PAK-3 SIPMOS

MOSFET N-Ch 100V 70A I2PAK-3 SIPMOS

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPI70N10SL-16
Product Name MOSFET
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