Infineon Technologies AG MOSFET IPI65R190CFD

Description
MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2
Description
MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2
Datasheet
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IPI65R190CFD is an N-channel MOSFET in an I2PAK-3 package, rated for 650 V drain-source voltage and 17.5 A drain current. It features low gate charge and improved switching performance for use in high-efficiency power conversion applications. The device meets AEC-Q200 qualification and is RoHS compliant.

Datasheet Summary
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IPI65R190CFD is an N-channel MOSFET in an I2PAK-3 package, rated for 650 V drain-source voltage and 17.5 A drain current. It features low gate charge and improved switching performance for use in high-efficiency power conversion applications. The device meets AEC-Q200 qualification and is RoHS compliant.

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Sheung Wan, Hong Kong
MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2

MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPI65R190CFD
Product Name MOSFET
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