Infineon Technologies AG 700V 20.2A MOSFET Transistor IPI65R190C6

Description
MOSFETs N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 Product overview: IPI65R190C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 20.2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPI65R190C6 can be used for catalog matching and distributor lookup.
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Description
MOSFETs N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 Product overview: IPI65R190C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 20.2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPI65R190C6 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
700V 20.2A MOSFET Transistor
2088-IPI65R190C6
700V 20.2A MOSFET Transistor 2088-IPI65R190C6
MOSFETs N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 Product overview: IPI65R190C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 20.2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPI65R190C6 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 Product overview: IPI65R190C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 20.2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPI65R190C6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI65R190C6 - 069023-IPI65R190C6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI65R190C6
069023-IPI65R190C6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI65R190C6 069023-IPI65R190C6
Manufacturer: Infineon Technologies Win Source Part Number: 069023-IPI65R190C6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 151W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 20.2A (Tc) Gate-Source Threshold Voltage: 3.5V @ 730μA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 1620pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 7.3A, 10V Alternative Parts (Cross-Reference): STI33N60M2; IPI65R190E6; IPI65R150CFDXK; IPI65R190C6; Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 069023-IPI65R190C6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 151W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 20.2A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 730μA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 1620pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 7.3A, 10V
Alternative Parts (Cross-Reference): STI33N60M2; IPI65R190E6; IPI65R150CFDXK; IPI65R190C6;
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6

MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2088-IPI65R190C6 069023-IPI65R190C6 IPI65R190C6
Product Name 700V 20.2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI65R190C6 MOSFET
Polarity N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
PD 151 milliwatts 151000 milliwatts
Package Type Tube SOT3; PG-TO262-3
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