Infineon Technologies AG 600V 6.8A MOSFET Transistor IPI60R520CPAKSA1

Description
MOSFET N-CH 600V 6.8A TO262-3 Product overview: IPI60R520CPAKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI60R520CPAKSA1 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 600V 6.8A TO262-3 Product overview: IPI60R520CPAKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI60R520CPAKSA1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
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Supplier Links
Singapore, Singapore
600V 6.8A MOSFET Transistor
278-IPI60R520CPAKSA1
600V 6.8A MOSFET Transistor 278-IPI60R520CPAKSA1
MOSFET N-CH 600V 6.8A TO262-3 Product overview: IPI60R520CPAKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI60R520CPAKSA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 6.8A TO262-3 Product overview: IPI60R520CPAKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI60R520CPAKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPI60R520CPAKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPI60R520CPAKSA1-ND
Single FETs, MOSFETs IPI60R520CPAKSA1-ND
N-Channel 600V 6.8A (Tc) 66W (Tc) Through Hole PG-TO262-3

N-Channel 600V 6.8A (Tc) 66W (Tc) Through Hole PG-TO262-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI60R520CPAKSA1 - 1045936-IPI60R520CPAKSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI60R520CPAKSA1
1045936-IPI60R520CPAKSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI60R520CPAKSA1 1045936-IPI60R520CPAKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045936-IPI60R520CPA KSA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 66W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.8A (Tc) Gate-Source Threshold Voltage: 3.5V @ 340μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 630pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 520 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1045936-IPI60R520CPAKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 66W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.8A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 340μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 630pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 520 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPI60R520CPAKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPI60R520CPAKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPI60R520CPAKSA1
MOSFET N-CH 600V 6.8A TO262-3

MOSFET N-CH 600V 6.8A TO262-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-IPI60R520CPAKSA1 IPI60R520CPAKSA1-ND 1045936-IPI60R520CPAKSA1 IPI60R520CPAKSA1
Product Name 600V 6.8A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI60R520CPAKSA1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 66000 milliwatts 66000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tube TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; PG-TO262-3 TO-262-3 Long Leads, I2PAK, TO-262AA
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