N-Channel 600V 11A (Tc) 96W (Tc) Through Hole PG-TO262-3
Manufacturer: Infineon Technologies
Win Source Part Number: 1045935-IPI60R299CPX
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 96W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 440μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1100pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 299 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 600V 11A TO262-3 Product overview: IPI60R299CPXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI60R299CPXKSA1
MOSFET N-CH 600V 11A TO262-3
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPI60R299CPXKSA1-ND | 1045935-IPI60R299CPXKSA1 | 278-IPI60R299CPXKSA1 | IPI60R299CPXKSA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI60R299CPXKSA1 | 600V 11A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; PG-TO262-3 | Tube | 29 nC @ 10 V |
| V(BR)DSS | 600 volts | 650 volts | ||
| PD | 96000 milliwatts | 96000 milliwatts |