Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI12CN10NG IPI12CN10NG

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069013-IPI12CN10NG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 83μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 4320pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12.9 mOhm @ 67A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 069013-IPI12CN10NG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 83μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 4320pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12.9 mOhm @ 67A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI12CN10NG - 069013-IPI12CN10NG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI12CN10NG
069013-IPI12CN10NG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI12CN10NG 069013-IPI12CN10NG
Manufacturer: Infineon Technologies Win Source Part Number: 069013-IPI12CN10NG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 83μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 4320pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12.9 mOhm @ 67A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 069013-IPI12CN10NG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 67A (Tc)
Gate-Source Threshold Voltage: 4V @ 83μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 4320pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12.9 mOhm @ 67A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069013-IPI12CN10NG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI12CN10NG
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 125000 milliwatts
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