Infineon Technologies AG 80V 120A MOSFET Transistor IPI120N08S404AKSA1

MOSFET N-CH 80V 120A TO262-3 Product overview: IPI120N08S404AKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPI120N08S404AKSA1 can be used for catalog matching and distributor lookup.

N-Channel 80V 120A (Tc) 179W (Tc) Through Hole PG-TO262-3-1

Win Source Part Number: 1382314-IPI120N08S404AKSA1
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tube
Standard Package: 500 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 179W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPI120N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)