The IPI08CN10N G is an N-channel MOSFET transistor in a TO-262-3 package (PG-TO262-3), designed for high-frequency switching and synchronous rectification. It has a drain-source voltage rating of 100 V and a continuous drain current of 95 A at 25°C. The maximum on-resistance is 8.5 mΩ at 95 A and 10 V gate-source voltage. The gate threshold voltage is 4 V at 130 µA, with a maximum gate-source voltage of ±20 V. Power dissipation is rated at 167 W, with an operating temperature range of -55°C to 175°C. It meets AEC-Q200 standards for automotive reliability and is compliant with RoHS. The device features a low gate charge of 100 nC at 10 V and an input capacitance of 6660 pF at 50 V.
Win Source Part Number: 1027625-IPI08CN10N G
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 95A, 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 167W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000208926,IPI08CN1
Base Product Number: IPI08C
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1027625-IPI08CN10N G |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
