Infineon Technologies AG Single FETs, MOSFETs IPI052NE7N3 G

N-channel MOSFET designed for high-frequency switching applications, available in a PG-TO262-3 through-hole package with a standard 3-terminal configuration. Rated for a drain-source voltage of 75 V and a continuous drain current of 80 A at 25°C case temperature, with a maximum power dissipation of 150 W. Features a typical on-resistance of 5.2 mΩ at 10 V gate-source voltage and a gate charge of 75 nC. Complies with RoHS standards and is qualified to AEC-Q101 for automotive applications. Operating temperature range is -55°C to 175°C.