IPI041N12N3 G is an N-channel MOSFET designed for high-frequency switching and synchronous rectification, packaged in PG-TO262-3. It has a maximum drain-source voltage of 120 V, continuous drain current of 120 A, and a maximum on-resistance of 4.1 mΩ at 25 °C with a gate-source voltage of 10 V. The device supports an operating temperature range from -55 °C to 175 °C, with a thermal resistance from junction to case of 0.5 K/W. It is qualified according to JEDEC standards, RoHS compliant, and halogen free.
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPI041N12N3 G |
| Product Name | MOSFET |
