Infineon Technologies AG Single FETs, MOSFETs IPI032N06N3GAKSA1

N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3

Win Source Part Number: 1065259-IPI032N06N3GAKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 118µA
Power Dissipation (Max): 188W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPI120N06S403AKSA1; IPI040N06N3GXKSA1; IPI024N06N3GXKSA1; 2SK4066-1E; FDI040N06IPI032N06N3 G; IPI032N06N3G;
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPI032N06N3GAKSA1,SP000680650,IFEINFIPI032N06N3GAKSA1
Base Product Number: IPI032
Drive Voltage (Max Rds On, Min Rds On): 10V