Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI028N08N3 G IPI028N08N3 G

Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 994717-IPI028N08N3 G Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 80 V Input Capacitance: 14.2 nF Power Dissipation: 300 W Number of Pins: 3 Rise Time: 73 ns Fall Time: 33 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-262 Alternative Parts (Cross-Reference): IPI028N08N3 GIPI028N08N3G; Popularity: Low Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: No SVHC Element Configuration: Single Max Power Dissipation: 300 W Turn-On Delay Time: 28 ns Continuous Drain Current (ID): 100 A Drain to Source Breakdown Voltage: 80 V Turn-Off Delay Time: 86 ns Drain to Source Resistance: 2.8 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 2.8 mΩ Threshold Voltage: 2.8 V