The IPG20N06S4L-26A is a dual N-channel logic-level enhancement mode MOSFET designed for automotive applications, packaged in PG-TDSON-8 with an operating temperature range of -55°C to +175°C. It has a maximum drain-source voltage of 60 V, continuous drain current of 20 A per channel, and a maximum on-state resistance of 26 mΩ at 10 V gate-source voltage and 17 A current. The device is AEC-Q101 qualified, 100% avalanche tested, RoHS compliant, and rated for MSL1 reflow up to 260°C. Thermal resistance from junction to case is 4.5 K/W.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1186240-IPG20N06S4L-
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
| Infineon Technologies AG | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPG20N06S4L-26A | 1186240-IPG20N06S4L-26A | IPG20N06S4L-26A |
| Product Name | Automotive MOSFET | Electronic Surplus - IPG20N06S4L-26A | MOSFET |
| Polarity | N+N | ||
| Transistor Technology / Material | Si/SiC | ||
| VGS(off) | 1.7 volts | ||
| rDS(on) | 0.0260 ohms |