The IPG20N06S4L-14A is a dual N-channel logic-level enhancement mode MOSFET for automotive applications, packaged in PG-TDSON-8 with a maximum continuous drain current of 20 A per channel and a drain-source breakdown voltage of 60 V. It operates at up to 175°C and is AEC-Q101 qualified, RoHS compliant, and 100% avalanche tested. The device has a maximum on-state resistance of 13.7 mΩ at Vgs=10 V and ID=17 A, with a thermal resistance from junction to case of 3 K/W. It supports peak reflow temperatures up to 260°C and features a gate-source voltage rating of ±16 V.
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Category: OEM Souring
Win Source Part Number: 1463509-IPG20N06S4L-
Manufacturer: Infineon Technologies
60V 20A 13.7mΩ@10V,17A 50W 2.2V@20uA 2 N-Channel TDSON-8-4 MOSFETs ROHS
| Infineon Technologies AG | Win Source Electronics | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | IPG20N06S4L-14A | 1463509-IPG20N06S4L-14A | IPG20N06S4L-14A |
| Product Name | Automotive MOSFET | OEM Souring | Transistors |
| Polarity | N+N | ||
| Transistor Technology / Material | Si/SiC | ||
| VGS(off) | 1.7 volts | ||
| rDS(on) | 0.0137 ohms |