Infineon Technologies AG FET, MOSFET Arrays IPG20N06S2L65ATMA1

Description
Mosfet Array 2 N-Channel (Dual) 55V 20A 43W Surface Mount PG-TDSON-8-4
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 55V 20A 43W Surface Mount PG-TDSON-8-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 448-IPG20N06S2L65ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Mosfet Array 2 N-Channel (Dual) 55V 20A 43W Surface Mount PG-TDSON-8-4

Mosfet Array 2 N-Channel (Dual) 55V 20A 43W Surface Mount PG-TDSON-8-4

Buy Now Datasheet
FET, MOSFET Arrays - 448-IPG20N06S2L65ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Mosfet Array 2 N-Channel (Dual) 55V 20A 43W Surface Mount PG-TDSON-8-4

Mosfet Array 2 N-Channel (Dual) 55V 20A 43W Surface Mount PG-TDSON-8-4

Buy Now Datasheet
FET, MOSFET Arrays - 448-IPG20N06S2L65ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Mosfet Array 2 N-Channel (Dual) 55V 20A 43W Surface Mount PG-TDSON-8-4

Mosfet Array 2 N-Channel (Dual) 55V 20A 43W Surface Mount PG-TDSON-8-4

Buy Now Datasheet
Singapore
55V 20A MOSFET Transistor
289-IPG20N06S2L65ATMA1
55V 20A MOSFET Transistor 289-IPG20N06S2L65ATMA1
MOSFET 2N-CH 55V 20A 8TDSON Product overview: IPG20N06S2L65ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 20A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IPG20N06S2L65ATM A1 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 55V 20A 8TDSON Product overview: IPG20N06S2L65ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 20A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IPG20N06S2L65ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPG20N06S2L65ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPG20N06S2L65ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPG20N06S2L65ATMA1
MOSFET 2N-CH 55V 20A 8TDSON

MOSFET 2N-CH 55V 20A 8TDSON

Supplier's Site
FET, MOSFET Arrays - IPG20N06S2L65ATMA1 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IPG20N06S2L65ATMA1
FET, MOSFET Arrays IPG20N06S2L65ATMA1
MOSFET 2N-CH 55V 20A TDSON-8-4

MOSFET 2N-CH 55V 20A TDSON-8-4

Supplier's Site Datasheet
Mosfet, Aec-Q101, Dual N Ch, Tdson-8; Transistor Polarity Infineon - 13AC9056 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, Dual N Ch, Tdson-8; Transistor Polarity Infineon
13AC9056
Mosfet, Aec-Q101, Dual N Ch, Tdson-8; Transistor Polarity Infineon 13AC9056
MOSFET, AEC-Q101, DUAL N CH, TDSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, DUAL N CH, TDSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 448-IPG20N06S2L65ATMA1CT-ND 289-IPG20N06S2L65ATMA1 IPG20N06S2L65ATMA1 IPG20N06S2L65ATMA1 13AC9056
Product Name FET, MOSFET Arrays 55V 20A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays Mosfet, Aec-Q101, Dual N Ch, Tdson-8; Transistor Polarity Infineon
Package Type 8-PowerVDFN Tape & Reel (TR) Automotive 8-PowerVDFN TO-3
Transistor Grade / Operating Range Automotive
MOSFET Operating Mode Enhancement
V(BR)DSS 55 volts 55 volts
PD 43000 milliwatts
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