MOSFET 2N-CH 40V 20A 8TDSON Product overview: IPG20N04S409ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 20A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IPG20N04S409ATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 874790-IPG20N04S409A
Series: Automotive, AEC-Q101, OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) 40V 20A (Tc) 54W (Tc) Surface Mount PG-TDSON-8
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPG20N04
Categories: Discrete Semiconductor Products
Case / Package: PG-TDSON-8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Limited
Quantity per package: 5000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPG20N04S409ATMA1-ND
Mosfet Array 2 N-Channel (Dual) 40V 20A (Tc) 54W (Tc) Surface Mount PG-TDSON-8
MOSFET N-CHANNEL_30/40V
MOSFET, AEC-Q101, N-CH, 40V, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0079ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
MOSFET 2N-CH 40V 20A 8TDSON
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-IPG20N04S409ATMA1 | 874790-IPG20N04S409ATMA1 | 448-IPG20N04S409ATMA1TR-ND | IPG20N04S409ATMA1 | 49AC0299 | IPG20N04S409ATMA1 | IPG20N04S409ATMA1 |
| Product Name | 40V 20A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPG20N04S409ATMA1 | FET, MOSFET Arrays | FET, MOSFET Arrays | Mosfet, Aec-Q101, N-Ch, 40V, Tdson; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 54 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
