Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPG15N06S3L-45 IPG15N06S3L-45

Manufacturer: Infineon Technologies
Win Source Part Number: 1001585-IPG15N06S3L-45
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TDSON-8-4
Maximum Power Dissipation: 21W
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 15A
Gate-Source Threshold Voltage: 2.2V @ 10μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1420pF @ 25V
Maximum Rds On at Id,Vgs: 45 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Mosfet Array 2 N-Channel (Dual) 55V 15A 21W Surface Mount PG-TDSON-8-4

MOSFET 2N-CH 55V 15A 8TDSON Product overview: IPG15N06S3L-45 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 15A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IPG15N06S3L-45 can be used for catalog matching and distributor lookup.