Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IPDQ65R060CFD7A IPDQ65R060CFD7A

Description
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 60mΩ IPDQ65R060CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Top side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2 mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability High power dissipation, Ptot 694 W/25°C Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles
Request a Quote Datasheet
Description
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 60mΩ IPDQ65R060CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Top side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2 mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability High power dissipation, Ptot 694 W/25°C Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPDQ65R060CFD7A - IPDQ65R060CFD7A - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPDQ65R060CFD7A
IPDQ65R060CFD7A
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPDQ65R060CFD7A IPDQ65R060CFD7A
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 60mΩ IPDQ65R060CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Top side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2 mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability High power dissipation, Ptot 694 W/25°C Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles

650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling

The 60mΩ IPDQ65R060CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Top side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and
3.2 mm creepage distance.


Summary of Features

  • AEC-Q101 qualified
  • For hard- and soft-switching topologies
  • Intrinsic fast body diode
  • Reduced parasitic source inductance
  • Kelvin source pin
  • High current capability
  • High power dissipation, Ptot 694 W/25°C
  • Creepage distance of 3.2 mm for HV

Benefits

  • Better utilization of PCB space
  • Highest reliability for automotive appl.
  • Optimized power loop
  • Decoupling of thermals from substrate
  • Enabling of higher power density designs
  • Scalable for use in PFC and DC-DC stage
  • Granular portfolio available

Potential Applications

  • On-board chargers
  • HV-LV DC-DC converters
  • Auxiliary power supplies

Applications

  • AC-DC auxiliary power supplies
  • High-voltage DC-DC converter for electric vehicles
  • On-board charging (OBC) for electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPDQ65R060CFD7A
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IPDQ65R060CFD7A
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.0600 ohms
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