Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IPDQ65R060CFD7A IPDQ65R060CFD7A

Description
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 60mΩ IPDQ65R060CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Top side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2 mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability High power dissipation, Ptot 694 W/25°C Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles
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Description
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 60mΩ IPDQ65R060CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Top side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2 mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability High power dissipation, Ptot 694 W/25°C Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles
Request a Quote
Datasheet
Datasheet Summary
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The IPDQ65R060CFD7A is a 650 V automotive-qualified N-channel MOSFET with an integrated fast body diode, designed for PFC and resonant switching topologies such as LLC and ZVS phase-shift full-bridge. It is packaged in a PG-HDSOP-22 surface-mount case with a maximum on-resistance of 60 mΩ, a gate charge of 65 nC, and a pulsed drain current rating of 139 A. The device is avalanche-tested to 164 mJ at 5.1 A and has a maximum junction temperature of 150 °C. It meets AEC-Q101 qualification and features a Kelvin source pin for improved controllability.

Datasheet Summary
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The IPDQ65R060CFD7A is a 650 V automotive-qualified N-channel MOSFET with an integrated fast body diode, designed for PFC and resonant switching topologies such as LLC and ZVS phase-shift full-bridge. It is packaged in a PG-HDSOP-22 surface-mount case with a maximum on-resistance of 60 mΩ, a gate charge of 65 nC, and a pulsed drain current rating of 139 A. The device is avalanche-tested to 164 mJ at 5.1 A and has a maximum junction temperature of 150 °C. It meets AEC-Q101 qualification and features a Kelvin source pin for improved controllability.

Suppliers

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Power - MOSFET (Si/SiC) - Automotive MOSFET - IPDQ65R060CFD7A - IPDQ65R060CFD7A - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPDQ65R060CFD7A
IPDQ65R060CFD7A
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPDQ65R060CFD7A IPDQ65R060CFD7A
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 60mΩ IPDQ65R060CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Top side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2 mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability High power dissipation, Ptot 694 W/25°C Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles

650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling

The 60mΩ IPDQ65R060CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Top side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and
3.2 mm creepage distance.


Summary of Features

  • AEC-Q101 qualified
  • For hard- and soft-switching topologies
  • Intrinsic fast body diode
  • Reduced parasitic source inductance
  • Kelvin source pin
  • High current capability
  • High power dissipation, Ptot 694 W/25°C
  • Creepage distance of 3.2 mm for HV

Benefits

  • Better utilization of PCB space
  • Highest reliability for automotive appl.
  • Optimized power loop
  • Decoupling of thermals from substrate
  • Enabling of higher power density designs
  • Scalable for use in PFC and DC-DC stage
  • Granular portfolio available

Potential Applications

  • On-board chargers
  • HV-LV DC-DC converters
  • Auxiliary power supplies

Applications

  • AC-DC auxiliary power supplies
  • High-voltage DC-DC converter for electric vehicles
  • On-board charging (OBC) for electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPDQ65R060CFD7A
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IPDQ65R060CFD7A
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.0600 ohms
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