The IPDQ60T010S7A is a 600 V CoolMOS™ S7A silicon N-channel MOSFET with an integrated temperature sensor, designed for automotive high-current, low-frequency switching applications such as solid-state relays and circuit breakers. It is packaged in PG-HDSOP-22, measuring 15.30-15.50 mm by 14.90-15.10 mm. The device has a maximum drain-source on-state resistance of 10 mΩ at 25°C, a pulsed drain current of 796 A, and a junction temperature range of -40°C to 150°C, with extended operation up to 175°C for up to 50 hours. The embedded temperature sensor enables accurate thermal monitoring and reduces external sensing components. It meets AEC-Q101 qualifications for automotive applications.
600 V CoolMOS™ S7TA SJ MOSFET with integrated temperature sensor in Q-DPAK TSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy
The CoolMOS™ S7TA with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation and functional safety. The device is optimized for low-frequency and high-current switching applications.
It is an ideal fit for solid-state relay, Battery Disconnect, and eFuses. The temperature sensor enhances CoolMOS™ S7A features, allowing the best possible utilization of the power transistor.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPDQ60T010S7A |
| Product Name | Power - MOSFET (Si/SiC) - Automotive MOSFET - 600V-800V N-Channel Automotive MOSFET - 600 V CoolMOS™ S7A / S7TA - IPDQ60T010S7A |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| VGS(off) | 3.5 to 4.5 volts |
| rDS(on) | 0.0100 ohms |
