Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPDH5N03LA G IPDH5N03LA G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 138997-IPDH5N03LA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 35μA Max Gate Charge: 22nC @ 5V Max Input Capacitance: 2653pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 138997-IPDH5N03LA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 35μA Max Gate Charge: 22nC @ 5V Max Input Capacitance: 2653pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPDH5N03LA G - 138997-IPDH5N03LA G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPDH5N03LA G
138997-IPDH5N03LA G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPDH5N03LA G 138997-IPDH5N03LA G
Manufacturer: Infineon Technologies Win Source Part Number: 138997-IPDH5N03LA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 35μA Max Gate Charge: 22nC @ 5V Max Input Capacitance: 2653pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 138997-IPDH5N03LA G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 35μA
Max Gate Charge: 22nC @ 5V
Max Input Capacitance: 2653pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 138997-IPDH5N03LA G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPDH5N03LA G
Polarity N-Channel; N-Channel
V(BR)DSS 25 volts
PD 83000 milliwatts
Unlock Full Specs
to access all available technical data