The IPDD60R102G7 is a 600V N-channel MOSFET designed for high-performance applications. It features a continuous drain current rating of 23A and a maximum pulsed drain current of 66A. The device has a low on-resistance (RDS(on)) of 102 mOc, which contributes to improved efficiency in power conversion applications. The MOSFET is housed in a DDPAK package, which includes a 4-pin Kelvin Source configuration that minimizes parasitic inductance, enhancing switching performance. This MOSFET is suitable for both hard and soft switching applications, including Power Factor Correction (PFC) and high-performance LLC converters. It is compliant with MSL1 standards and is Pb-free, making it suitable for industrial applications. The device can operate at junction temperatures up to 150¬8C and has a maximum power dissipation of 139W at 25¬8C. Its robust design and thermal characteristics make it a viable choice for high current designs in sectors such as computing, telecom, and renewable energy systems.
N-Channel 600V 23A (Tc) 139W (Tc) Surface Mount PG-HDSOP-10-1
N-Channel 600V 23A (Tc) 139W (Tc) Surface Mount PG-HDSOP-10-1
N-Channel 600V 23A (Tc) 139W (Tc) Surface Mount PG-HDSOP-10-1
MOSFET N-CH 600V 23A HDSOP-10
MOSFET, N-CH, 600V, 23A, HDSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
| DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPDD60R102G7XTMA1TR-ND | IPDD60R102G7XTMA1 | IPDD60R102G7XTMA1 | 59AC7041 |
| Product Name | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 23A, Hdsop; Transistor Polarity Infineon |
| Polarity | N-Channel |
