MOSFET N-CH 950V 4A TO252-3
Win Source Part Number: 980930-IPD95R2K0P7AT
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ P7
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Power Dissipation (Max): 37W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPD95R2K0P7ATMA1DKR,
Base Product Number: IPD95R2
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 950V 4A TO252-3 Product overview: IPD95R2K0P7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 950V, 4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 950V, 4A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD95R2K0P7ATMA1
N-Channel 950V 4A (Tc) 37W (Tc) Surface Mount PG-TO252-3
N-Channel 950V 4A (Tc) 37W (Tc) Surface Mount PG-TO252-3
N-Channel 950V 4A (Tc) 37W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 950V 4A TO252-3
MOSFET, 950V, 4A, 150DEG C, 37W; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:950V; On Resistance Rds(on):1.71ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD95R2K0P7ATMA1 | 980930-IPD95R2K0P7ATMA1 | 2195994 | 278-IPD95R2K0P7ATMA1 | IPD95R2K0P7ATMA1TR-ND | IPD95R2K0P7ATMA1 | 71AC0385 | IPD95R2K0P7ATMA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | 950V 4A TO252 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, 950V, 4A, 150Deg C, 37W; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 950 volts | 950 volts | ||||||
| IDSS | 4000 milliamps | 4000 milliamps | ||||||
| PD | 37000 milliwatts | 37000 milliwatts | 37 milliwatts |
