MOSFET P-CH 30V 90A TO252-3 Product overview: IPD90P03P4L04ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90P03P4L04ATM
Win Source Part Number: 986263-IPD90P03P4L04
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 2V @ 253µA
Power Dissipation (Max): 137W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Vgs (Max): +5V, -16V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000396300,IPD90P03
Base Product Number: IPD90P
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
P-Channel 30V 90A (Tc) 137W (Tc) Surface Mount PG-TO252-3-11
MOSFET P-CH 30V 90A TO252-3
MOSFET, AEC-Q101, P-CH, -30V, TO-252- 3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
MOSFET P-CH 30V 90A TO252-3
MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD90P03P4L04ATMA1 | 986263-IPD90P03P4L04ATMA1 | IPD90P03P4L04ATMA1TR-ND | IPD90P03P4L04ATMA1 | 79X1438 | IPD90P03P4L04ATMA1 | IPD90P03P4L04ATMA1 |
| Product Name | 30V 90A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, -30V, To-2523; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 137 milliwatts | 137000 milliwatts | 137000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
