Infineon Technologies AG 100V 90A TO252 MOSFET Transistor IPD90N10S4L06ATMA1

Description
MOSFET N-CH 100V 90A TO252-3 Product overview: IPD90N10S4L06ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90N10S4L06ATM A1 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
MOSFET N-CH 100V 90A TO252-3 Product overview: IPD90N10S4L06ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90N10S4L06ATM A1 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
100V 90A TO252 MOSFET Transistor
278-IPD90N10S4L06ATMA1
100V 90A TO252 MOSFET Transistor 278-IPD90N10S4L06ATMA1
MOSFET N-CH 100V 90A TO252-3 Product overview: IPD90N10S4L06ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90N10S4L06ATM A1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 90A TO252-3 Product overview: IPD90N10S4L06ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90N10S4L06ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 2183055 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2183055
MOSFETs 2183055
Infineon MOSFET IPD90N10S4L06ATMA1

Infineon MOSFET IPD90N10S4L06ATMA1

Supplier's Site
MOSFETs - 2183054 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2183054
MOSFETs 2183054
Infineon MOSFET IPD90N10S4L06ATMA1

Infineon MOSFET IPD90N10S4L06ATMA1

Supplier's Site
MOSFETs - 2183055P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2183055P
MOSFETs 2183055P
Infineon MOSFET IPD90N10S4L06ATMA1

Infineon MOSFET IPD90N10S4L06ATMA1

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1146822-IPD90N10S4L06ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1146822-IPD90N10S4L06ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1146822-IPD90N10S4L06ATMA1
Win Source Part Number: 1146822-IPD90N10S4L0 6ATMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, OptiMOS™ Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 2.1V @ 90µA Power Dissipation (Max): 136W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3-313 Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V Vgs (Max): ±16V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): IPD90N10S4L-06; IPD90N10S4L-06ATMA1; IPD90N10S4L06; ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IPD90N10S4L06ATMA1-N D,IPD90N10S4L06ATMA1 CT,IPD90N10S4L06ATMA 1TR,IPD90N10S4L06ATM A1DKR,SP000866562 Base Product Number: IPD90N Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1146822-IPD90N10S4L06ATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Power Dissipation (Max): 136W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-313
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPD90N10S4L-06; IPD90N10S4L-06ATMA1; IPD90N10S4L06;
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPD90N10S4L06ATMA1-ND,IPD90N10S4L06ATMA1CT,IPD90N10S4L06ATMA1TR,IPD90N10S4L06ATMA1DKR,SP000866562
Base Product Number: IPD90N
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - IPD90N10S4L06ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD90N10S4L06ATMA1TR-ND
Single FETs, MOSFETs IPD90N10S4L06ATMA1TR-ND
N-Channel 100V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313

N-Channel 100V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313

Buy Now Datasheet
Single FETs, MOSFETs - IPD90N10S4L06ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD90N10S4L06ATMA1DKR-ND
Single FETs, MOSFETs IPD90N10S4L06ATMA1DKR-ND
N-Channel 100V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313

N-Channel 100V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313

Buy Now Datasheet
Single FETs, MOSFETs - IPD90N10S4L06ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD90N10S4L06ATMA1CT-ND
Single FETs, MOSFETs IPD90N10S4L06ATMA1CT-ND
N-Channel 100V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313

N-Channel 100V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313

Buy Now Datasheet
Mosfet, N-Ch, 100V, 90A, 175Deg C, 136W; Channel Type Infineon - 34AC1693 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 90A, 175Deg C, 136W; Channel Type Infineon
34AC1693
Mosfet, N-Ch, 100V, 90A, 175Deg C, 136W; Channel Type Infineon 34AC1693
MOSFET, N-CH, 100V, 90A, 175DEG C, 136W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 90A, 175DEG C, 136W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD90N10S4L06ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD90N10S4L06ATMA1
Single FETs, MOSFETs IPD90N10S4L06ATMA1
MOSFET N-CH 100V 90A TO252-3

MOSFET N-CH 100V 90A TO252-3

Supplier's Site Datasheet
Transistor - 108068932 - Radwell International
Willingboro, NJ, United States
Transistor
108068932
Transistor 108068932
(PRICE/TC) MOSFET, N-CH, 100V, 90A, 175DEG C, 136W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:90A; ON RESISTANCE RDS(ON):0.0058OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLI. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC) MOSFET, N-CH, 100V, 90A, 175DEG C, 136W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:90A; ON RESISTANCE RDS(ON):0.0058OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLI. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD90N10S4L06ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD90N10S4L06ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD90N10S4L06ATMA1
MOSFET N-CH 100V 90A TO252-3

MOSFET N-CH 100V 90A TO252-3

Supplier's Site
MOSFET MOSFET

MOSFET MOSFET

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. RS Components, Ltd. Win Source Electronics DigiKey Newark, An Avnet Company ODG (Origin Data Global) Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-IPD90N10S4L06ATMA1 2183055 1146822-IPD90N10S4L06ATMA1 IPD90N10S4L06ATMA1TR-ND 34AC1693 IPD90N10S4L06ATMA1 108068932 IPD90N10S4L06ATMA1 IPD90N10S4L06ATMA1
Product Name 100V 90A TO252 MOSFET Transistor MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Mosfet, N-Ch, 100V, 90A, 175Deg C, 136W; Channel Type Infineon Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts 100 volts
PD 136 milliwatts 136000 milliwatts 136000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data