Infineon Technologies AG Automotive MOSFET IPD90N10S4L-06

Summary of Features

• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested

Benefits

• highest current capability 180A
• low switching and conduction power losses for high thermal efficiency
• robust packages with superior quality and reliability
• optimized total gate charge enables smaller driver output stages

Potential Applications

• 48V inverter
• 48V DC/DC
• HID lighting

Simulation/SPICE-Model

Applications

• 48 V to 12 V DC-DC converter
• Automotive electric pumps and fans 12 V
• Automotive secondary power distribution unit
• Diesel direct injection
• Wired Communication

Designers who used this product also designed with

• BTS134D |
  Classic HITFET™ 12V | automotive smart low-side switches
• IPD30N06S2L-23 |
  Automotive MOSFET
• IPD30N06S2L-13 |
  Automotive MOSFET
• BSS138N |
  Small signal/small power MOSFET
• TLE4253E |
  OPTIREG™ linear voltage regulators (LDO)
• BTS3405G |
  Classic HITFET™ 12V | automotive smart low-side switches
• IPD90P04P4L-04 |
  Automotive MOSFET
• BTS452T |
  Classic PROFET™ 24V | automotive smart high-side switch
• IPG20N06S4L-14A |
  Automotive MOSFET
• BTS134D |
  Classic HITFET™ 12V | automotive smart low-side switches
• IPD30N06S2L-23 |
  Automotive MOSFET
• IPD30N06S2L-13 |
  Automotive MOSFET
• BSS138N |
  Small signal/small power MOSFET
• TLE4253E |
  OPTIREG™ linear voltage regulators (LDO)
• BTS3405G |
  Classic HITFET™ 12V | automotive smart low-side switches
• IPD90P04P4L-04 |
  Automotive MOSFET
• BTS452T |
  Classic PROFET™ 24V | automotive smart high-side switch

1
2
3

Manufacturer: Infineon Technologies
Win Source Part Number: 205228-IPD90N10S4L-06
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3-313
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 90μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 6250pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 90A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

MOSFETs MOSFET Product overview: IPD90N10S4L-06 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD90N10S4L-06 can be used for catalog matching and distributor lookup.