Infineon Technologies AG Automotive MOSFET IPD90N10S4L-06

Summary of Features

• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested

Benefits

• highest current capability 180A
• low switching and conduction power losses for high thermal efficiency
• robust packages with superior quality and reliability
• optimized total gate charge enables smaller driver output stages

Potential Applications

• 48V inverter
• 48V DC/DC
• HID lighting

Simulation/SPICE-Model

Applications

• 48 V to 12 V DC-DC converter
• Automotive electric pumps and fans 12 V
• Automotive secondary power distribution unit
• Diesel direct injection
• Wired Communication

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Manufacturer: Infineon Technologies
Win Source Part Number: 205228-IPD90N10S4L-06
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3-313
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 90μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 6250pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 90A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance