Infineon Technologies AG Automotive MOSFET IPD90N04S4L-04

Description
Summary of Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Package (RoHS compliant) 100% Avalanche tested Benefits Low switching and conduction power losses for highest thermal efficiency Robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control). Body applications Simulation/ SPICE-Model Applications Body electronics and power distribution Chassis control & safety Electric vehicle (EV) drivetrain system Electronic stability control Wired Communication Designers who used this product also designed with TLE4296-2G V50 | OPTIREG™ linear voltage regulators (LDO) BAT165 | Schottky Diodes BSS138N | Small signal/small power MOSFET CYT2B73BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series TLE4254EJ S | OPTIREG™ linear voltage regulators (LDO) IPG20N06S2L-35 | Automotive MOSFET TLE4296-2G V50 | OPTIREG™ linear voltage regulators (LDO) BAT165 | Schottky Diodes BSS138N | Small signal/small power MOSFET CYT2B73BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series TLE4254EJ S | OPTIREG™ linear voltage regulators (LDO) IPG20N06S2L-35 | Automotive MOSFET TLE4296-2G V50 | OPTIREG™ linear voltage regulators (LDO) BAT165 | Schottky Diodes 1 2
  • Automotive MOSFET - IPD90N04S4L-04 - Infineon Technologies AG
    Infineon Technologies AG
  • Discrete Semiconductor Products - 040638-IPD90N04S4L-04 - Win Source Electronics
    Win Source Electronics
  • Transistors - IPD90N04S4L-04 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Summary of Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Package (RoHS compliant) 100% Avalanche tested Benefits Low switching and conduction power losses for highest thermal efficiency Robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control). Body applications Simulation/ SPICE-Model Applications Body electronics and power distribution Chassis control & safety Electric vehicle (EV) drivetrain system Electronic stability control Wired Communication Designers who used this product also designed with TLE4296-2G V50 | OPTIREG™ linear voltage regulators (LDO) BAT165 | Schottky Diodes BSS138N | Small signal/small power MOSFET CYT2B73BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series TLE4254EJ S | OPTIREG™ linear voltage regulators (LDO) IPG20N06S2L-35 | Automotive MOSFET TLE4296-2G V50 | OPTIREG™ linear voltage regulators (LDO) BAT165 | Schottky Diodes BSS138N | Small signal/small power MOSFET CYT2B73BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series TLE4254EJ S | OPTIREG™ linear voltage regulators (LDO) IPG20N06S2L-35 | Automotive MOSFET TLE4296-2G V50 | OPTIREG™ linear voltage regulators (LDO) BAT165 | Schottky Diodes 1 2
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Datasheet
Datasheet Summary
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The IPD90N04S4L-04 is an N-channel enhancement mode MOSFET designed for automotive applications, housed in a PG-TO252-3-313 package. It has a drain-source voltage rating of 40 V, a continuous drain current of 90 A at 25°C, and a maximum on-state resistance of 3.8 mΩ at 10 V gate-source voltage. The device supports an operating junction temperature up to 175°C and is AEC-Q200 qualified, RoHS compliant, and 100% avalanche tested. It features single-pulse avalanche energy of 95 mJ at 45 A and a gate-source voltage range of ±20 V. Thermal resistance from junction to case is 2.1 K/W.

Datasheet Summary
Powered by GS/AI

The IPD90N04S4L-04 is an N-channel enhancement mode MOSFET designed for automotive applications, housed in a PG-TO252-3-313 package. It has a drain-source voltage rating of 40 V, a continuous drain current of 90 A at 25°C, and a maximum on-state resistance of 3.8 mΩ at 10 V gate-source voltage. The device supports an operating junction temperature up to 175°C and is AEC-Q200 qualified, RoHS compliant, and 100% avalanche tested. It features single-pulse avalanche energy of 95 mJ at 45 A and a gate-source voltage range of ±20 V. Thermal resistance from junction to case is 2.1 K/W.

Suppliers

Company
Product
Description
Supplier Links
Automotive MOSFET - IPD90N04S4L-04 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPD90N04S4L-04
Automotive MOSFET IPD90N04S4L-04
Summary of Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Package (RoHS compliant) 100% Avalanche tested Benefits Low switching and conduction power losses for highest thermal efficiency Robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control). Body applications Simulation/ SPICE-Model Applications Body electronics and power distribution Chassis control & safety Electric vehicle (EV) drivetrain system Electronic stability control Wired Communication Designers who used this product also designed with TLE4296-2G V50 | OPTIREG™ linear voltage regulators (LDO) BAT165 | Schottky Diodes BSS138N | Small signal/small power MOSFET CYT2B73BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series TLE4254EJ S | OPTIREG™ linear voltage regulators (LDO) IPG20N06S2L-35 | Automotive MOSFET TLE4296-2G V50 | OPTIREG™ linear voltage regulators (LDO) BAT165 | Schottky Diodes BSS138N | Small signal/small power MOSFET CYT2B73BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series TLE4254EJ S | OPTIREG™ linear voltage regulators (LDO) IPG20N06S2L-35 | Automotive MOSFET TLE4296-2G V50 | OPTIREG™ linear voltage regulators (LDO) BAT165 | Schottky Diodes 1 2

Summary of Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Package (RoHS compliant)
  • 100% Avalanche tested

Benefits

  • Low switching and conduction power losses for highest thermal efficiency
  • Robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages

Potential Applications

  • OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).
  • Body applications

Simulation/ SPICE-Model


Applications

  • Body electronics and power distribution
  • Chassis control & safety
  • Electric vehicle (EV) drivetrain system
  • Electronic stability control
  • Wired Communication

Designers who used this product also designed with


  • TLE4296-2G V50 |
    OPTIREG™ linear voltage regulators (LDO)
  • BAT165 |
    Schottky Diodes
  • BSS138N |
    Small signal/small power MOSFET
  • CYT2B73BADQ0AZEGST |
    TRAVEO™ T2G CYT2B7 Series
  • TLE4254EJ S |
    OPTIREG™ linear voltage regulators (LDO)
  • IPG20N06S2L-35 |
    Automotive MOSFET
  • TLE4296-2G V50 |
    OPTIREG™ linear voltage regulators (LDO)
  • BAT165 |
    Schottky Diodes
  • BSS138N |
    Small signal/small power MOSFET
  • CYT2B73BADQ0AZEGST |
    TRAVEO™ T2G CYT2B7 Series
  • TLE4254EJ S |
    OPTIREG™ linear voltage regulators (LDO)
  • IPG20N06S2L-35 |
    Automotive MOSFET
  • TLE4296-2G V50 |
    OPTIREG™ linear voltage regulators (LDO)
  • BAT165 |
    Schottky Diodes

1
2

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
40V 90A DPAK MOSFET Transistor
2088-IPD90N04S4L-04
40V 90A DPAK MOSFET Transistor 2088-IPD90N04S4L-04
MOSFETs N-Ch 40V 90A DPAK-2 OptiMOS-T2 Product overview: IPD90N04S4L-04 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, DPAK, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD90N04S4L-04 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 40V 90A DPAK-2 OptiMOS-T2 Product overview: IPD90N04S4L-04 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, DPAK, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD90N04S4L-04 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - 040638-IPD90N04S4L-04 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
040638-IPD90N04S4L-04
Discrete Semiconductor Products 040638-IPD90N04S4L-04
Manufacturer: Infineon Technologies Win Source Part Number: 040638-IPD90N04S4L-0 4 Category: Discrete Semiconductor Products Family: FETs - Single Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 040638-IPD90N04S4L-04
Category: Discrete Semiconductor Products
Family: FETs - Single
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Transistors - IPD90N04S4L-04 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD90N04S4L-04
Transistors IPD90N04S4L-04
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2

MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPD90N04S4L-04
MOSFET IPD90N04S4L-04
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2

MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD90N04S4L-04 2088-IPD90N04S4L-04 040638-IPD90N04S4L-04 IPD90N04S4L-04 IPD90N04S4L-04
Product Name Automotive MOSFET 40V 90A DPAK MOSFET Transistor Discrete Semiconductor Products Transistors MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
VGS(off) 1.2 to 2.2 volts
rDS(on) 0.0038 ohms
TJ -55 to 175 C (-67 to 347 F)
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