Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD85P04P4L06ATMA1 IPD85P04P4L06ATMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 776868-IPD85P04P4L06 ATMA1 Series: Automotive, AEC-Q101, OptiMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Family Name: IPD85P04P4L-06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PG-TO252-3-313 Channel Type Type: P Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 2.2V @ 150μA Gate Charge (Qg) (Maximum) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6580pF @ 25V Vgs (Maximum): ±16V Power Dissipation (Maximum): 88W (Tc) Rds On (Maximum) @ Id, Vgs: 6.4 mOhm @ 85A, 10V Alternative Parts (Cross-Reference): TJ60S04M3L; TJ60S04M3L(T6L1,NQ; TJ80S04M3L; TJ80S04M3L(T6L1,NQ; Introduction Date: April 18, 2011 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 776868-IPD85P04P4L06 ATMA1 Series: Automotive, AEC-Q101, OptiMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Family Name: IPD85P04P4L-06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PG-TO252-3-313 Channel Type Type: P Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 2.2V @ 150μA Gate Charge (Qg) (Maximum) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6580pF @ 25V Vgs (Maximum): ±16V Power Dissipation (Maximum): 88W (Tc) Rds On (Maximum) @ Id, Vgs: 6.4 mOhm @ 85A, 10V Alternative Parts (Cross-Reference): TJ60S04M3L; TJ60S04M3L(T6L1,NQ; TJ80S04M3L; TJ80S04M3L(T6L1,NQ; Introduction Date: April 18, 2011 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD85P04P4L06ATMA1 - 776868-IPD85P04P4L06ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD85P04P4L06ATMA1
776868-IPD85P04P4L06ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD85P04P4L06ATMA1 776868-IPD85P04P4L06ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 776868-IPD85P04P4L06 ATMA1 Series: Automotive, AEC-Q101, OptiMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Family Name: IPD85P04P4L-06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PG-TO252-3-313 Channel Type Type: P Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 2.2V @ 150μA Gate Charge (Qg) (Maximum) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6580pF @ 25V Vgs (Maximum): ±16V Power Dissipation (Maximum): 88W (Tc) Rds On (Maximum) @ Id, Vgs: 6.4 mOhm @ 85A, 10V Alternative Parts (Cross-Reference): TJ60S04M3L; TJ60S04M3L(T6L1,NQ; TJ80S04M3L; TJ80S04M3L(T6L1,NQ; Introduction Date: April 18, 2011 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 776868-IPD85P04P4L06ATMA1
Series: Automotive, AEC-Q101, OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Family Name: IPD85P04P4L-06
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PG-TO252-3-313
Channel Type Type: P
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.2V @ 150μA
Gate Charge (Qg) (Maximum) @ Vgs: 104nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6580pF @ 25V
Vgs (Maximum): ±16V
Power Dissipation (Maximum): 88W (Tc)
Rds On (Maximum) @ Id, Vgs: 6.4 mOhm @ 85A, 10V
Alternative Parts (Cross-Reference): TJ60S04M3L; TJ60S04M3L(T6L1,NQ; TJ80S04M3L; TJ80S04M3L(T6L1,NQ;
Introduction Date: April 18, 2011
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
40V 85A TO252 MOSFET Transistor
278-IPD85P04P4L06ATMA1
40V 85A TO252 MOSFET Transistor 278-IPD85P04P4L06ATMA1
MOSFET P-CH 40V 85A TO252-3 Product overview: IPD85P04P4L06ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 85A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 85A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD85P04P4L06ATM A1 can be used for catalog matching and distributor lookup.

MOSFET P-CH 40V 85A TO252-3 Product overview: IPD85P04P4L06ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 85A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 85A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD85P04P4L06ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 448-IPD85P04P4L06ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPD85P04P4L06ATMA1TR-ND
Single FETs, MOSFETs 448-IPD85P04P4L06ATMA1TR-ND
P-Channel 40V 85A (Tc) 88W (Tc) Surface Mount PG-TO252-3-313

P-Channel 40V 85A (Tc) 88W (Tc) Surface Mount PG-TO252-3-313

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD85P04P4L06ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD85P04P4L06ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD85P04P4L06ATMA1
MOSFET P-CH 40V 85A TO252-3

MOSFET P-CH 40V 85A TO252-3

Supplier's Site
Single FETs, MOSFETs - IPD85P04P4L06ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD85P04P4L06ATMA1
Single FETs, MOSFETs IPD85P04P4L06ATMA1
MOSFET P-CH 40V 85A TO252-3

MOSFET P-CH 40V 85A TO252-3

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 776868-IPD85P04P4L06ATMA1 278-IPD85P04P4L06ATMA1 448-IPD85P04P4L06ATMA1TR-ND IPD85P04P4L06ATMA1 IPD85P04P4L06ATMA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD85P04P4L06ATMA1 40V 85A TO252 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
PD 88000 milliwatts 88000 milliwatts 88000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK) Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Packing Method Tape Reel; Reel package Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
Polarity P-Channel P-Channel; P-Channel
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