MOSFET N-CH TO252-3 Product overview: IPD80R2K7C3AATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD80R2K7C3AATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 874781-IPD80R2K7C3AA
Series: *
Package: Reel - TR
Family Name: IPD80R2
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 94 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 2156-IPD80R2K7C3AATM
Infineon MOSFET IPD80R2K7C3AATMA1
N-Channel 800V 2A (Tc) 42W (Tc) Surface Mount D-Pak
N-Channel 800V 2A (Tc) 42W (Tc) Surface Mount D-Pak
N-Channel 800V 2A (Tc) 42W (Tc) Surface Mount D-Pak
MOSFET, AEC-Q101, N-CH, 800V, 2A, 42W ROHS COMPLIANT: YES
MOSFET N-CH TO252-3
MOSFET N-CH TO252-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPD80R2K7C3AATMA1 | 874781-IPD80R2K7C3AATMA1 | 2172531 | 2172532P | 448-IPD80R2K7C3AATMA1CT-ND | 39AH8911 | IPD80R2K7C3AATMA1 | IPD80R2K7C3AATMA1 | IPD80R2K7C3AATMA1 |
| Product Name | TO252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD80R2K7C3AATMA1 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 800V, 2A, 42W Rohs Compliant Infineon | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 800 volts | 800 volts | |||||||
| PD | 42 milliwatts | 42000 milliwatts | |||||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
