Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD80N04S306ATMA1 IPD80N04S306ATMA1

Manufacturer: Infineon Technologies
Win Source Part Number: 119784-IPD80N04S306ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 52μA
Max Gate Charge: 47nC @ 10V
Max Input Capacitance: 3250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

N-Channel 40V 90A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

MOSFET N-CH 40V 90A TO252-3 Product overview: IPD80N04S306ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD80N04S306ATMA1 can be used for catalog matching and distributor lookup.