OPTLMOS N-CHANNEL POWER MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 1045894-IPD80N04S3-0
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 52μA
Max Gate Charge: 47nC @ 10V
Max Input Capacitance: 3250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T
| ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD80N04S3-06 | 1045894-IPD80N04S3-06 | IPD80N04S3-06 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD80N04S3-06 | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||
| V(BR)DSS | 40 volts | 40 volts | |
| IDSS | 90000 milliamps |
