Infineon Technologies AG Automotive MOSFET IPD70P04P4-09

Description
Summary of Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No charge pump required for high side drive. Simple interface drive circuit World's lowest RDSon at 40V Highest current capability Lowest switching and conduction power losses for highest thermal efficiency Robust packages with superior quality and reliability Standard packages TO-252, TO-263, TO-220, TO-262 Potential Applications High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors) Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump Simulation/SPICE-Mod el Applications Automotive body control module (BCM) Belt starter generator 48 V – inverter ISG Electric vehicle (EV) drivetrain system EV traction inverter Designers who used this product also designed with BSL215C | Dual MOSFET BTS3134N | Classic HITFET™ 12V | automotive smart low-side switches AUIR3242STR | Gate driver ICs 2ED4820-EM | Automotive gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules IPD25N06S4L-30 | Automotive MOSFET 1EBN1001AE | Gate driver ICs IPD50N10S3L-16 | Automotive MOSFET IPD35N10S3L-26 | Automotive MOSFET BSS205N | Small signal/small power MOSFET SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1EDI2002AS | Gate driver ICs BSS215P | Small signal/small power MOSFET BAT64 | Schottky Diodes BTN8962TA | MOTIX™ single half-bridge ICs for BDC motors BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch TLE4963-1M | Magnetic switches TLE7259-3GE | Automotive LIN transceivers TLE9250VLE | Automotive CAN transceivers BSL215C | Dual MOSFET BTS3134N | Classic HITFET™ 12V | automotive smart low-side switches AUIR3242STR | Gate driver ICs 2ED4820-EM | Automotive gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules IPD25N06S4L-30 | Automotive MOSFET 1EBN1001AE | Gate driver ICs 1 2 3 4 5
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Description
Summary of Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No charge pump required for high side drive. Simple interface drive circuit World's lowest RDSon at 40V Highest current capability Lowest switching and conduction power losses for highest thermal efficiency Robust packages with superior quality and reliability Standard packages TO-252, TO-263, TO-220, TO-262 Potential Applications High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors) Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump Simulation/SPICE-Mod el Applications Automotive body control module (BCM) Belt starter generator 48 V – inverter ISG Electric vehicle (EV) drivetrain system EV traction inverter Designers who used this product also designed with BSL215C | Dual MOSFET BTS3134N | Classic HITFET™ 12V | automotive smart low-side switches AUIR3242STR | Gate driver ICs 2ED4820-EM | Automotive gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules IPD25N06S4L-30 | Automotive MOSFET 1EBN1001AE | Gate driver ICs IPD50N10S3L-16 | Automotive MOSFET IPD35N10S3L-26 | Automotive MOSFET BSS205N | Small signal/small power MOSFET SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1EDI2002AS | Gate driver ICs BSS215P | Small signal/small power MOSFET BAT64 | Schottky Diodes BTN8962TA | MOTIX™ single half-bridge ICs for BDC motors BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch TLE4963-1M | Magnetic switches TLE7259-3GE | Automotive LIN transceivers TLE9250VLE | Automotive CAN transceivers BSL215C | Dual MOSFET BTS3134N | Classic HITFET™ 12V | automotive smart low-side switches AUIR3242STR | Gate driver ICs 2ED4820-EM | Automotive gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules IPD25N06S4L-30 | Automotive MOSFET 1EBN1001AE | Gate driver ICs 1 2 3 4 5
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Datasheet
Datasheet Summary
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The IPD70P04P4-09 is a P-channel enhancement mode MOSFET designed for automotive applications, featuring a PG-TO252-3-313 package. It has a continuous drain current of -73 A at 25°C, a drain-source breakdown voltage of -40 V, and a drain-source on-state resistance of 8.9 mΩ at -10 V gate bias. The device operates at temperatures up to 175°C, is AEC qualified, MSL1 rated for 260°C peak reflow, RoHS compliant, and 100% avalanche tested. Thermal resistance from junction to case is 2 K/W, and it is rated to withstand single-pulse avalanche energy of 24 mJ at -36 A drain current. The gate-source voltage rating is ±20 V with a gate plateau voltage of -5.4 V.

Datasheet Summary
Powered by GS/AI

The IPD70P04P4-09 is a P-channel enhancement mode MOSFET designed for automotive applications, featuring a PG-TO252-3-313 package. It has a continuous drain current of -73 A at 25°C, a drain-source breakdown voltage of -40 V, and a drain-source on-state resistance of 8.9 mΩ at -10 V gate bias. The device operates at temperatures up to 175°C, is AEC qualified, MSL1 rated for 260°C peak reflow, RoHS compliant, and 100% avalanche tested. Thermal resistance from junction to case is 2 K/W, and it is rated to withstand single-pulse avalanche energy of 24 mJ at -36 A drain current. The gate-source voltage rating is ±20 V with a gate plateau voltage of -5.4 V.

Suppliers

Company
Product
Description
Supplier Links
Automotive MOSFET - IPD70P04P4-09 - Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPD70P04P4-09
Automotive MOSFET IPD70P04P4-09
Summary of Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No charge pump required for high side drive. Simple interface drive circuit World's lowest RDSon at 40V Highest current capability Lowest switching and conduction power losses for highest thermal efficiency Robust packages with superior quality and reliability Standard packages TO-252, TO-263, TO-220, TO-262 Potential Applications High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors) Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump Simulation/SPICE-Mod el Applications Automotive body control module (BCM) Belt starter generator 48 V – inverter ISG Electric vehicle (EV) drivetrain system EV traction inverter Designers who used this product also designed with BSL215C | Dual MOSFET BTS3134N | Classic HITFET™ 12V | automotive smart low-side switches AUIR3242STR | Gate driver ICs 2ED4820-EM | Automotive gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules IPD25N06S4L-30 | Automotive MOSFET 1EBN1001AE | Gate driver ICs IPD50N10S3L-16 | Automotive MOSFET IPD35N10S3L-26 | Automotive MOSFET BSS205N | Small signal/small power MOSFET SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1EDI2002AS | Gate driver ICs BSS215P | Small signal/small power MOSFET BAT64 | Schottky Diodes BTN8962TA | MOTIX™ single half-bridge ICs for BDC motors BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch TLE4963-1M | Magnetic switches TLE7259-3GE | Automotive LIN transceivers TLE9250VLE | Automotive CAN transceivers BSL215C | Dual MOSFET BTS3134N | Classic HITFET™ 12V | automotive smart low-side switches AUIR3242STR | Gate driver ICs 2ED4820-EM | Automotive gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules IPD25N06S4L-30 | Automotive MOSFET 1EBN1001AE | Gate driver ICs 1 2 3 4 5

Summary of Features

  • P-channel - Normal Level - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (RoHS compliant)
  • 100% Avalanche tested

Benefits

  • No charge pump required for high side drive.
  • Simple interface drive circuit
  • World's lowest RDSon at 40V
  • Highest current capability
  • Lowest switching and conduction power losses for highest thermal efficiency
  • Robust packages with superior quality and reliability
  • Standard packages TO-252, TO-263, TO-220, TO-262

Potential Applications

  • High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
  • Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump

Simulation/SPICE-Model


Applications

  • Automotive body control module (BCM)
  • Belt starter generator 48 V – inverter ISG
  • Electric vehicle (EV) drivetrain system
  • EV traction inverter

Designers who used this product also designed with


  • BSL215C |
    Dual MOSFET
  • BTS3134N |
    Classic HITFET™ 12V | automotive smart low-side switches
  • AUIR3242STR |
    Gate driver ICs
  • 2ED4820-EM |
    Automotive gate driver ICs
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • FS820R08A6P2B |
    Automotive IGBT and CoolSiC™ MOSFET modules
  • IPD25N06S4L-30 |
    Automotive MOSFET
  • 1EBN1001AE |
    Gate driver ICs
  • IPD50N10S3L-16 |
    Automotive MOSFET
  • IPD35N10S3L-26 |
    Automotive MOSFET
  • BSS205N |
    Small signal/small power MOSFET
  • SAK-TC277TC-64F200N DC |
    AURIX™ Family – TC27xT
  • 1EDI2002AS |
    Gate driver ICs
  • BSS215P |
    Small signal/small power MOSFET
  • BAT64 |
    Schottky Diodes
  • BTN8962TA |
    MOTIX™ single half-bridge ICs for BDC motors
  • BTS7040-1EPA |
    PROFET™ +2 12V | automotive smart high-side switch
  • TLE4963-1M |
    Magnetic switches
  • TLE7259-3GE |
    Automotive LIN transceivers
  • TLE9250VLE |
    Automotive CAN transceivers
  • BSL215C |
    Dual MOSFET
  • BTS3134N |
    Classic HITFET™ 12V | automotive smart low-side switches
  • AUIR3242STR |
    Gate driver ICs
  • 2ED4820-EM |
    Automotive gate driver ICs
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • FS820R08A6P2B |
    Automotive IGBT and CoolSiC™ MOSFET modules
  • IPD25N06S4L-30 |
    Automotive MOSFET
  • 1EBN1001AE |
    Gate driver ICs

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Supplier's Site Datasheet
Singapore, Singapore
-40V -73A DPAK MOSFET Transistor
2088-IPD70P04P4-09
-40V -73A DPAK MOSFET Transistor 2088-IPD70P04P4-09
MOSFETs P-Ch -40V -73A DPAK-2 OptiMOS-P2 Product overview: IPD70P04P4-09 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, -73A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, -73A, DPAK, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD70P04P4-09 can be used for catalog matching and distributor lookup.

MOSFETs P-Ch -40V -73A DPAK-2 OptiMOS-P2 Product overview: IPD70P04P4-09 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, -73A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, -73A, DPAK, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD70P04P4-09 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - 069002-IPD70P04P4-09 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
069002-IPD70P04P4-09
Discrete Semiconductor Products 069002-IPD70P04P4-09
Manufacturer: Infineon Technologies Win Source Part Number: 069002-IPD70P04P4-09 Category: Discrete Semiconductor Products Family: FETs - Single Family Name: IPD70P04P4-09 Alternative Parts (Cross-Reference): SQD90P04-9m4L-GE3 ; ATP108-TL-H; SUD50P04-08-GE3; SUD50N04-08-GE3; Introduction Date: May 26, 2010 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 069002-IPD70P04P4-09
Category: Discrete Semiconductor Products
Family: FETs - Single
Family Name: IPD70P04P4-09
Alternative Parts (Cross-Reference): SQD90P04-9m4L-GE3 ; ATP108-TL-H; SUD50P04-08-GE3; SUD50N04-08-GE3;
Introduction Date: May 26, 2010
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPD70P04P4-09 2088-IPD70P04P4-09 069002-IPD70P04P4-09
Product Name Automotive MOSFET -40V -73A DPAK MOSFET Transistor Discrete Semiconductor Products
Polarity P-Channel; P P-Channel
Transistor Technology / Material Si/SiC
VGS(off) -4 to -2 volts
rDS(on) 0.0089 ohms
TJ -55 to 175 C (-67 to 347 F)
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