The IPD65R660CFDA is a 650V CoolMOS™ CFDA superjunction MOSFET designed for automotive switching applications. It is packaged in a DPAK (PG-TO252) and meets AEC-Q101 qualification standards. The device features a continuous drain current of 6 A at 25°C, a drain-source on-state resistance of 0.66 Ω maximum, and a gate charge of 20 nC. It includes an ultra-fast body diode with a reverse recovery time of 65 ns and a peak reverse recovery current of 4.5 A. The maximum junction temperature is 150°C, with a thermal resistance from junction to case of 2 K/W and from junction to ambient of 62 K/W on a 40mm×40mm×1.5mm FR4 PCB with 6cm² copper area. The package is RoHS compliant, lead-free, and halogen-free.
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.
Summary of Features
Benefits
Potential Applications
Applications
Designers who used this product also designed with
Manufacturer: Infineon Technologies
Win Source Part Number: 1186181-IPD65R660CFD
Manufacturer Homepage: www.infineon.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
| Infineon Technologies AG | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD65R660CFDA | 1186181-IPD65R660CFDA | IPD65R660CFDA |
| Product Name | Automotive MOSFET | Electronic Surplus - IPD65R660CFDA | MOSFET |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 0.6600 ohms |
