N-Channel 650V 7A (Tc) 86W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 7A (Tc) 86W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 7A (Tc) 86W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 650V 7A TO252-3
Manufacturer: Infineon Technologies
Win Source Part Number: 776866-IPD65R650CEAU
Series: CoolMOS CE
Packaging: Reel package
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Family Name: IPD65R650CE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO252-3
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 3.5V @ 210μA
Gate Charge (Qg) (Maximum) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 440pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 86W (Tc)
Rds On (Maximum) @ Id, Vgs: 650 mOhm @ 2.1A, 10V
Alternative Parts (Cross-Reference): STD8NM60ND; STD11NM60ND; TSM60N900CP ROG; TSM6N60CP ROG;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
MOSFET N-CH 650V 7A TO252-3 Product overview: IPD65R650CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R650CEAUMA1
MOSFET N-CH 650V 7A TO252-3
MOSFET, N-CH, 650V, 10.1A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD65R650CEAUMA1TR-ND | IPD65R650CEAUMA1 | 776866-IPD65R650CEAUMA1 | 278-IPD65R650CEAUMA1 | IPD65R650CEAUMA1 | IPD65R650CEAUMA1 | 34AC1687 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R650CEAUMA1 | 650V 7A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 10.1A, To-252; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK) | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 650 volts | 650 volts | |||||
| IDSS | 7000 milliamps | 10100 milliamps |
