Infineon Technologies AG Single FETs, MOSFETs IPD65R650CEATMA1

N-Channel 650V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3

Win Source Part Number: 1382311-IPD65R650CEATMA1
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Series: CoolMOS™
Package: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 86W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPD65R
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Standard Package: 2,500 pcs

MOSFET N-CH 650V 10.1A TO252-3 Product overview: IPD65R650CEATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 10.1A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 10.1A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R650CEATMA1 can be used for catalog matching and distributor lookup.