Infineon Technologies AG 650V 7.3A TO252 MOSFET Transistor IPD65R600E6BTMA1

MOSFET N-CH 650V 7.3A TO252-3 Product overview: IPD65R600E6BTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R600E6BTMA1 can be used for catalog matching and distributor lookup.

N-Channel 650V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3

Manufacturer: Infineon Technologies
Win Source Part Number: 114480-IPD65R600E6BTMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7.3A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 210μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 440pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 2.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance