Infineon Technologies AG 650V 7.3A TO252 MOSFET Transistor IPD65R600E6ATMA1

Description
MOSFET N-CH 650V 7.3A TO252-3 Product overview: IPD65R600E6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R600E6ATMA1 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 650V 7.3A TO252-3 Product overview: IPD65R600E6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R600E6ATMA1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
650V 7.3A TO252 MOSFET Transistor
278-IPD65R600E6ATMA1
650V 7.3A TO252 MOSFET Transistor 278-IPD65R600E6ATMA1
MOSFET N-CH 650V 7.3A TO252-3 Product overview: IPD65R600E6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R600E6ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 7.3A TO252-3 Product overview: IPD65R600E6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R600E6ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD65R600E6ATMA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD65R600E6ATMA1-ND
Single FETs, MOSFETs IPD65R600E6ATMA1-ND
N-Channel 650V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3

N-Channel 650V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1137085-IPD65R600E6ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1137085-IPD65R600E6ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1137085-IPD65R600E6ATMA1
Win Source Part Number: 1137085-IPD65R600E6A TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ E6 Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Power Dissipation (Max): 63W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IPD65R600E 6; IPD65R600E6; IPD65R600E6BTMA1; SP000800216; ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001117096,2156-IPD 65R600E6ATMA1,ROCINF IPD65R600E6ATMA1 Base Product Number: IPD65R600 Product Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1137085-IPD65R600E6ATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™ E6
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPD65R600E 6; IPD65R600E6; IPD65R600E6BTMA1; SP000800216;
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001117096,2156-IPD65R600E6ATMA1,ROCINFIPD65R600E6ATMA1
Base Product Number: IPD65R600
Product Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V

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MOSFET N-Ch 700V 7.3A DPAK-2

MOSFET N-Ch 700V 7.3A DPAK-2

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD65R600E6ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD65R600E6ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD65R600E6ATMA1
MOSFET N-CH 650V 7.3A TO252-3

MOSFET N-CH 650V 7.3A TO252-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-IPD65R600E6ATMA1 IPD65R600E6ATMA1-ND 1137085-IPD65R600E6ATMA1 IPD65R600E6ATMA1 IPD65R600E6ATMA1
Product Name 650V 7.3A TO252 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 650 volts
PD 63000 milliwatts 63000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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