Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R600E6 IPD65R600E6

Description
Manufacturer: Infineon Technologies Win Source Part Number: 040636-IPD65R600E6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Family Name: IPD65R600E6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7.3A (Tc) Gate-Source Threshold Voltage: 3.5V @ 210μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 440pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 2.1A, 10V Alternative Parts (Cross-Reference): SiHD6N65E-GE3; STD11N60M2-EP ; STD11NM60ND; STD12N60DM2AG ; Introduction Date: July 15, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R600E6 - 040636-IPD65R600E6 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPD65R600E6 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 040636-IPD65R600E6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Family Name: IPD65R600E6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7.3A (Tc) Gate-Source Threshold Voltage: 3.5V @ 210μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 440pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 2.1A, 10V Alternative Parts (Cross-Reference): SiHD6N65E-GE3; STD11N60M2-EP ; STD11NM60ND; STD12N60DM2AG ; Introduction Date: July 15, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R600E6 - 040636-IPD65R600E6 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R600E6
040636-IPD65R600E6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R600E6 040636-IPD65R600E6
Manufacturer: Infineon Technologies Win Source Part Number: 040636-IPD65R600E6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Family Name: IPD65R600E6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7.3A (Tc) Gate-Source Threshold Voltage: 3.5V @ 210μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 440pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 2.1A, 10V Alternative Parts (Cross-Reference): SiHD6N65E-GE3; STD11N60M2-EP ; STD11NM60ND; STD12N60DM2AG ; Introduction Date: July 15, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 040636-IPD65R600E6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Family Name: IPD65R600E6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7.3A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 210μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 440pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 2.1A, 10V
Alternative Parts (Cross-Reference): SiHD6N65E-GE3; STD11N60M2-EP ; STD11NM60ND; STD12N60DM2AG ;
Introduction Date: July 15, 2010
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
650V 7.3A DPAK MOSFET Transistor
285-IPD65R600E6
650V 7.3A DPAK MOSFET Transistor 285-IPD65R600E6
Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 650V 7.3A TO252-3 Product overview: IPD65R600E6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD65R600E6 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 650V 7.3A TO252-3 Product overview: IPD65R600E6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD65R600E6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD65R600E6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD65R600E6
Single FETs, MOSFETs IPD65R600E6
COOLMOS N-CHANNEL POWER MOSFET

COOLMOS N-CHANNEL POWER MOSFET

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 040636-IPD65R600E6 285-IPD65R600E6 IPD65R600E6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R600E6 650V 7.3A DPAK MOSFET Transistor Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 650 volts 650 volts
PD 63000 milliwatts 63000 milliwatts 63000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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