Infineon Technologies AG TO252 MOSFET Transistor IPD65R250E6

MOSFET N-CH TO252-3 Product overview: IPD65R250E6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, TO252, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD65R250E6 can be used for catalog matching and distributor lookup.

N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies
Win Source Part Number: 205227-IPD65R250E6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Family Name: IPD65R250E6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 16.1A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 400μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 950pF @ 1000V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 4.4A, 10V
Alternative Parts (Cross-Reference): TSM70N380CP ROG; STD18N65M5; STD16N65M5;
Introduction Date: July 08, 2011
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management