MOSFET N-CH 600V 4.4A TO252-3 Product overview: IPD60R950C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4.4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.4A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R950C6 can be used for catalog matching and distributor lookup.
N-Channel 600V 4.4A (Tc) 37W (Tc) Surface Mount PG-TO252-3
Manufacturer: Infineon Technologies
Win Source Part Number: 1186170-IPD60R950C6
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IPD60R950C6
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.infineon.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 37W
Alternative Parts (Cross-Reference): STD7NM64N; STD7N60M2; STD7N65M2; STD5N65M6;
Introduction Date: January 12, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 4.4A
Rds On (Maximum) at Id, Vgs: 950mOhm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 130μA
Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 280pF at 100V
MOSFET N-CH 600V 4.4A TO252-3
MOSFET N-CH 600V 4.4A TO252-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD60R950C6 | IPD60R950C6INTR-ND | 1186170-IPD60R950C6 | IPD60R950C6 | IPD60R950C6 |
| Product Name | 600V 4.4A TO252 MOSFET Transistor | Single FETs, MOSFETs | Electronic Surplus - IPD60R950C6 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 600 volts | 600 volts | |||
| PD | 37000 milliwatts | 37000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
