Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R750E6ATMA1 IPD60R750E6ATMA1

Manufacturer: Infineon Technologies
Win Source Part Number: 105369-IPD60R750E6ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5.7A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 170μA
Max Gate Charge: 17.2nC @ 10V
Max Input Capacitance: 373pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 750 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

MOSFET N-CH 600V 5.7A TO252-3 Product overview: IPD60R750E6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5.7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 5.7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R750E6ATMA1 can be used for catalog matching and distributor lookup.

N-Channel 600V 5.7A (Tc) 48W (Tc) Surface Mount PG-TO252-3