MOSFET N-CH 600V 7.3A TO252 Product overview: IPD60R600E6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R600E6ATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 921286-IPD60R600E6AT
Series: CoolMOS™ E6
Features: N-Channel 600 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Bulk
Mounting: Surface Mount
Part Status: Not For New Designs
Family Name: IPD60R600
Categories: Discrete Semiconductor Products
Case / Package: PG-TO252-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
MOSFET, N-CH, 600V, 7.3A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 7.3A TO252
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPD60R600E6ATMA1 | 921286-IPD60R600E6ATMA1 | 448-IPD60R600E6ATMA1TR-ND | 13AC9046 | IPD60R600E6ATMA1 | IPD60R600E6ATMA1 |
| Product Name | 600V 7.3A TO252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R600E6ATMA1 | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 7.3A, To-252-3; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 600 volts | |||||
| PD | 63 milliwatts | |||||
| TJ | -55 C (-67 F) |
