MOSFET N-CH 600V 6.1A TO252-3 Product overview: IPD60R600CPBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.1A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.1A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R600CPBTMA1
N-Channel 600V 6.1A (Tc) 60W (Tc) Surface Mount PG-TO252-3
Manufacturer: Infineon Technologies
Win Source Part Number: 1045880-IPD60R600CPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.1A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 220μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 550pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
MOSFET N-CH 600V 6.1A TO252-3
Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) TO-252
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD60R600CPBTMA1 | IPD60R600CPBTMA1TR-ND | 1045880-IPD60R600CPBTMA1 | IPD60R600CPBTMA1 | 376-IPD60R600CPBTMA1 |
| Product Name | 600V 6.1A TO252 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R600CPBTMA1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) TO-252 |
| PD | 60000 milliwatts | 60000 milliwatts | 60000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); PG-TO252-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) |