Infineon Technologies AG 600V 6.1A TO252 MOSFET Transistor IPD60R600CPBTMA1

Description
MOSFET N-CH 600V 6.1A TO252-3 Product overview: IPD60R600CPBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.1A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.1A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R600CPBTMA1 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 600V 6.1A TO252-3 Product overview: IPD60R600CPBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.1A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.1A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R600CPBTMA1 can be used for catalog matching and distributor lookup.
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Suppliers

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Product
Description
Supplier Links
Singapore
600V 6.1A TO252 MOSFET Transistor
278-IPD60R600CPBTMA1
600V 6.1A TO252 MOSFET Transistor 278-IPD60R600CPBTMA1
MOSFET N-CH 600V 6.1A TO252-3 Product overview: IPD60R600CPBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.1A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.1A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R600CPBTMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 6.1A TO252-3 Product overview: IPD60R600CPBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.1A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.1A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R600CPBTMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD60R600CPBTMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD60R600CPBTMA1TR-ND
Single FETs, MOSFETs IPD60R600CPBTMA1TR-ND
N-Channel 600V 6.1A (Tc) 60W (Tc) Surface Mount PG-TO252-3

N-Channel 600V 6.1A (Tc) 60W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R600CPBTMA1 - 1045880-IPD60R600CPBTMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R600CPBTMA1
1045880-IPD60R600CPBTMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R600CPBTMA1 1045880-IPD60R600CPBTMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045880-IPD60R600CPB TMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.1A (Tc) Gate-Source Threshold Voltage: 3.5V @ 220μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 550pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.3A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial

Manufacturer: Infineon Technologies
Win Source Part Number: 1045880-IPD60R600CPBTMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.1A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 220μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 550pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD60R600CPBTMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD60R600CPBTMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD60R600CPBTMA1
MOSFET N-CH 600V 6.1A TO252-3

MOSFET N-CH 600V 6.1A TO252-3

Supplier's Site
Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) TO-252 - 376-IPD60R600CPBTMA1 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) TO-252
376-IPD60R600CPBTMA1
Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) TO-252 376-IPD60R600CPBTMA1
Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) TO-252

Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) TO-252

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-IPD60R600CPBTMA1 IPD60R600CPBTMA1TR-ND 1045880-IPD60R600CPBTMA1 IPD60R600CPBTMA1 376-IPD60R600CPBTMA1
Product Name 600V 6.1A TO252 MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R600CPBTMA1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) TO-252
PD 60000 milliwatts 60000 milliwatts 60000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); PG-TO252-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Packing Method Tape & Reel (TR) Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR Tape Reel; Tape & Reel (TR)
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